School of Natural Sciences
Centre for Applied Physics

Profile of Faculty

Dr. Sandeep Kumar Chaudhuri

PhD in Physics
M.Sc. in Physics

UGC Assistant Professor, FRP,
Centre for Applied Physics

Cell: +91-7797745227
E-Mail sandeep.chaudhuri@cuj.ac.in, csandeepk@gmail.com

Fields of Research Area  
  1. Semiconductor detector fabrication and characterization
  2. Nuclear technique based condensed matter physics
    - Positron annihilation spectroscopy
    - Alpha particle spectroscopy
    - Gamma ray spectroscopy
  3. Radiation effects in semiconductors
    - Deep Level Transient Spectroscopy (DLTS)
    - Positron Annihilation Spectroscopy (PAS)
  4. ZnO Nanocrystals - Defects
Research and Work Experiences  
  1. 2014 - Present: UGC Assistant Professor, Centre for Applied Physics, Central University of Jharkhand, Brambe, Ranchi-835 205, India.
  2. 2012 – 2014: Post-doctoral fellow with Dr. Krishna C Mandal, University of South Carolina, Columbia, USA.
  3. 2009 – 2012: Research Officer with Prof. Paul J. Sellin at the Department of Physics, University of Surrey, UK.
Fellowship and Awards  
  1. University Grants Commission Faculty Recharge Program (UGC-FRP)
Grants  
  1. UGC Start-up-grant, Ref. no.: F.4-5 (106-FRP)/2014(BSR), dated March’15
List of Publications   Published Papers:
  1. 1. K. C. Mandal, S. K. Chaudhuri, K. V. Nguyen, and M. A. Mannan, “Correlation of deep levels with detector performance in 4H-SiC epitaxial Schottky barrier alpha detectors,” IEEE Transactions on Nuclear Science, 61 (4), 2338, 2014.
  2. Mohammad A. Mannan, Sandeep K. Chaudhuri, Khai V. Nguyen, Krishna C. Mandal, “Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies,” Journal of Applied Physics 115 (22), 224504, 2014.
  3. Sandip Das, Sandeep K. Chaudhuri, Raghu N. Bhattacharya, Krishna C. Mandal, “Defect levels in Cu2ZnSn(SxSe1− x)4 solar cells probed by current-mode deep level transient spectroscopy,” Appl. Phys. Letters 104(19), 192106, 2014.
  4. Sandeep K. Chaudhuri, Khai Nguyen, Rahmi O. Pak, LiviuMatei, Vladimir Buliga, Michael Groza, Arnold Burger, Krishna C. Mandal, “Large Area Cd0.9Zn0.1Te Pixelated Detector: Fabrication and Characterization,” IEEE Transactions on Nuclear Science, 61 (2), 793, 2014.
  5. Sandeep K. Chaudhuri, Kelvin J. Zavalla, Krishna C. Mandal, “High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis,” Nuclear Instruments and Methods in Physics Research Section A 728, 97, 2013.
  6. Krishna C. Mandal, Peter G. Muzykov, Sandeep K. Chaudhuri, and J. Russell Terry, "Low energy x-ray and γ-ray detectors fabricated on n-type 4H-SiC epitaxial layer," IEEE Transactions on Nuclear Science, 60 (4), 2853, 2013.
  7. S. K. Chaudhuri, R. M. Krishna, K. J, Zavalla, L. Matei, V. Buliga, M. Groza, A. Burger, K. C. Mandal, “Cd0.9Zn0.1Te Crystal Growth and Fabrication of Large Volume Single-Polarity Charge Sensing Gamma Detectors” IEEE Transactions on Nuclear Science 60 (4), 2013.
  8. S. K. Chaudhuri, K. J. Zavalla, K. C. Mandal, “High Resolution Alpha Particle Detection Using 4H-SiC Epitaxial Layers: Fabrication, Characterization, and Noise Analysis” Nuclear Instruments and Methods in Physics Research Section A 728, 97, 2013.
  9. S. K. Chaudhuri, K. J. Zavalla, R. M. Krishna, K. C. Mandal, “Biparametric analyses of charge trapping in Cd0.9Zn0.1Te based virtual Frisch grid detectors” Journal of Applied Physics 113 (07), 074504, 2013.
  10. S. K. Chaudhuri, K. J. Zavalla, K. C. Mandal, “Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach” Appl. Phys. Letters 102(3), 031109, 2013.
  11. A. Banerjee, S. Bid, H. Dutta, S. Chaudhuri, D. Das, S. K. Pradhan, “Microstructural changes and effect of variation of lattice strain on positron annihilation lifetime parameters of zinc ferrite nanocomposites prepared by high energy ball-milling” Materials Research 15 (6), 1022, 2013.
  12. S. K. Chaudhuri, R. M. Krishna, K. J. Zavalla, K. C. Mandal, “Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles” Nuclear Instruments and Methods in Physics Research Section A 701, 11, 2013.
  13. R. M. Krishna, S. K. Chaudhuri, K. J. Zavalla, K. C. Mandal, “Characterization of Cd0.9Zn0.1Te based virtual Frisch grid detectors for high energy gamma ray detection” Nuclear Instruments and Methods in Physics Research Section A 701, 214, 2013.
  14. C. Allwork, D. Kitou, Sandeep Chaudhuri, P. J. Sellin, P. Seller, M. C. Veale, N. Tartoni, P. Veeramani, “X-Ray Beam Studies of Charge Sharing in Small Pixel, Spectroscopic, CdZnTe Detectors” IEEE Transactions on Nuclear Science 59(04), 1563, 2012.
  15. S. K. Chaudhuri, A. Lohstroh, M. Nakhostin and P. J. Sellin, “Digital pulse height correction in HgI2 -ray detector” Journal of Instrumentation 7 (04), T04002, 2012.
  16. S. K. Chaudhuri, K. Goswami, S. S. Ghugre and D. Das, “Evidence of formation of tetravacncies in uniformly oxygen irradiated n-type silicon” Physica B, Elsevier, 406 (2010) 693.
  17. S. K. Chaudhuri, Manoranjan Ghosh, D. Das and A. K. Raychaudhuri, “Probing defects in chemically synthesized ZnO nanostructures by positron annihilation and photoluminescence spectroscopy” Journal of Applied Physics 108 (2010) 064319.
  18. P. Pradeep, A. S. Prasad, S. N. Dolia, M. S. Dhawan, D. Das, S. K. Chaudhuri and V. Ghosh, “Nanocrystalline spinel MnxCu1-xFe2O4 ferrites – Synthesis and structural elucidation using x-ray diffraction and positron annihilation techniques” IEEE Transaction on Magnetics 46 (2009) 847-851.
  19. Udayan De, S. K. Chaudhuri, KritiRanjanSahu, D. Das, N. DuttaGupta and Keka R. Chakraborty, “Positron lifetime in piezoelectric PbNb2O6 and BaTiO3polycrystals” Phys. Status Solidi C 6 (2009) 2513-1515.
  20. Mrinal Sinha, M. MaitraGoswami, D. Mal, T. R. Middya, S. Tarafdar, Udayan De, S. K. Chaudhuri and D. Das, “Effect of gamma irradiation on the polymer electrolyte PEO-NH4ClO4”, Ionics 14 (2008) 323-327.
  21. S. Vinodh Kumar, B. Ghadei, S. K. Chaudhuri, J. B. M. Krishna, D. Das and A. Saha, “Chemical transformations and formation of free volume holes in high-energy proton irradiated low-density polyethylene (LDPE)” Rad. Phys. and Chem. 77 (2008) 751.
  22. A. K. Mishra, S. K. Chaudhuri, S. Mukherjee, A. Priyam, A. Saha and D. Das, “Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies”, J. Appl. Phys. 102 (2007) 103514.
  23. S. K. Chaudhuri, K. Goswami, S. S. Ghugre and D. Das, “Isochronal annealing behaviour of defects induced by swift oxygen ions in high-resistivity p-type silicon”, J. Phys.: Condens. Matter 19 (2007) 216206.
  24. S. K. Chaudhuri, P. V. Rajesh, S. S. Ghugre and D. Das “Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors” Defects and Diffusion in Semiconductors - an Annual Retrospective VIII. Trans Tech Publication Vol. 245-246, (2005), 23-28.
  25. S. K. Chaudhuri, S. Mukherjee, P.V. Rajesh, S. S. Ghugre and D. Das, “Positron annihilation studies of detector grade n-type silicon irradiated with 140 MeV oxygen (O6+) ions”, Physica B, 362 (2005) 249.

Conference Papers  
  1. Sandeep K. Chaudhuri, Khai Nguyen, Rahmi O. Pak, LiviuMatei, Vladimir Buliga, Michael Groza, Arnold Burger, and Krishna C. Mandal “Fabrication and characterization of large area Cd0.9Zn0.1Te guarded pixelated detector,” IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013, pp. 1-5.
  2. Krishna C. Mandal, Sandeep K. Chaudhuri, Khai Nguyen “An overview of application of 4H-SiC n-type epitaxial Schottky barrier detector for high resolution nuclear detection,” IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013, pp. 1-6.
  3. Kelvin J. Zavalla, Sandeep K. Chaudhuri, Krishna C. Mandal “Fabrication of high resolution n-type 4H-SiC epitaxial layer alpha particle detectors, defect characterization and electronic noise analysis,” SPIE Optical Engineering+Applications, 2013, pp. 88520D-88520D-7.
  4. Krishna C. Mandal, Abhinav Mehta, Sandeep K. Chaudhuri, Yunlong Cui, Michael Groza, Arnold Burger, “Characterization of amorphous selenium alloy detectors for x-rays and high-energy nuclear radiation detection” SPIE Optical Engineering+Applications, pp. 88521O-88521O-7, 2013.
  5. Kelvin J. Zavalla, Sandeep K. Chaudhuri, Krishna C. Mandal “Fabrication of High-Resolution Nuclear Detectors Using 4H-SiC n-type Epitaxial Layers” MRS Online Proceedings Library, vol. 1576, pp. mrss13-1576-ww01-02, 2013.
  6. Sandeep K. Chaudhuri, Kelvin J. Zavalla, Ramesh M. Krishna, Krishna C. Mandal “Gamma Ray Detection with Cd0.9Zn0.1Te Based Detectors Grown Using a Te Solvent Method MRS Online Proceedings Library, vol. 1576, pp. mrss13-1576-ww04-03, 2013.
  7. Peter G. Muzykov, Sandeep K. Chaudhuri, J Russell Terry, Krishna C. Mandal, “High-resolution x-and γ-ray detection using 4H-SiC n-type epitaxial layer,” IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012, 4216-4221.
  8. Sandeep K. Chaudhuri, Ramesh M. Krishna, Kelvin J. Zavalla, LiviuMatei, Vladimir Buliga, Michael Groza, Arnold Burger, K. C. Mandal, “Performance of Cd0.9Zn0.1Te based high-energy gamma detectors in various single polarity sensing device geometries,” IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012, 4266-4270.
  9. K. C. Mandal, P. G. Muzykov, S. K. Chaudhuri, and J. R. Terry, “Assessment of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors SPIE Optical Engineering+Applications, pp. 85070C-85070C-10, 2012.
  10. S. K. Chaudhuri, R. M. Krishna, K. J. Zavalla, K. C. Mandal “High energy γ-ray detection using CZT detectors with virtual Frisch grid,” SPIE Optical Engineering Applications, pp. 85070H-85070H-8, 2012.
Reviewer  
  1. Journal of Materials Science: Materials in Electronics
  2. Journal of Electronic Materials